PART |
Description |
Maker |
IRLI610A IRLW610A IRLI610ATU IRLW610ATM |
Advanced Power MOSFET 200V N-Channel Logic Level A-FET
|
Fairchild Semiconductor
|
IRLR210 IRLR210A IRLR210ATF IRLR210ATM |
ADVANCED POWER MOSFET 200V N-Channel Logic Level A-FET / Substitute of IRLR210
|
Fairchild Semiconductor
|
IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A) Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A) Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A) -200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
IRFB38N20D IRFSL38N20D IRFS38N20D IRFS38N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.054ohm/ Id=44A) TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|4A(丁)|63AB HEXFET? Power MOSFET Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)
|
International Rectifier, Corp. Fairchild Semiconductor IRF[International Rectifier]
|
IRF9630S IRF9630STRL IRF9630STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A) Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-6.5A)
|
IRF[International Rectifier]
|
IRC630 IRC |
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A) Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A) 200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
IRF[International Rectifier]
|
IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A) TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五(巴西)直|1A条(丁)|63AB Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)最大值\u003d 0.082ohm,身份证\u003d 31A条)
|
International Rectifier, Corp.
|
IRFU210 IRFR210 IRFU210PBF IRFR210TRL IRFR210TRR |
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package 200V Single N-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=2.6A)
|
IRF[International Rectifier]
|
FQE10N20LC FQE10N20LCTU |
200V N-Channel Advance Q-FET C-Series 200V Logic N-Channel MOSFET 4 A, 200 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-126
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
FQPF10N20C FQPF10N20CNL |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 9.5 A, 200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRFW520A IRFI520A IRFWI520A IRFW520ATM |
Advanced Power MOSFET N-CHANNEL POWER MOSFET 100V N-Channel A-FET Advanced Power MOSFET 9.2 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
IRF630N IRF630NL IRF630NS |
Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.30ohm,身份证\u003d 9.3A Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A) Power MOSFET(Vdss=200V Rds(on)=0.30ohm Id=9.3A)
|
International Rectifier, Corp. IRF[International Rectifier]
|